Breakdown Spots in Microelectronic Materials
A list of three point patterns, each giving the locations of electrical breakdown spots on a circular electrode in a microelectronic capacitor.
data(bdspots)
A list (of class "listof") of three spatial point patterns,
each representing the spatial locations of breakdown spots on an
electrode. The three electrodes are circular discs, of radii
169, 282 and 423 microns respectively. Spatial coordinates are
given in microns.
The application of successive voltage sweeps to the metal gate electrode of a microelectronic capacitor generates multiple breakdown spots on the electrode. The spatial distribution of these breakdown spots in MIM (metal-insulator-metal) and MIS (metal-insulator-semiconductor) structures was observed and analysed by Miranda et al (2010, 2013) and Saura et al (2013a, 2013b, 2014).
The data given here are the breakdown spot patterns for three circular electrodes of different radii, 169, 282 and 423 microns respectively, in MIM structures analysed in Saura et al (2013a).
Professor Enrique Miranda, Departament d'Enginyeria Electronica, Escola d'Enginyeria, Universitat Autonoma de Barcelona, Barcelona, Spain.
Miranda, E. and O'Connor, E. and Hurley, P.K. (2010) Simulation of the breakdown spots spatial distribution in high-K dielectrics and model validation using the spatstat package for R language. ECS Transactions 33 (3) 557–562.
Miranda, E., Jimenez, D., Sune, J., O'Connor, E., Monaghan, S., Povey, I., Cherkaoui, K. and Hurley, P. K. (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. J. Vac. Sci. Technol. B 31, 01A107.
Saura, X., Sune, J., Monaghan, S., Hurley, P.K. and Miranda, E. (2013a) Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics. J. Appl. Phys. 114, 154112.
Saura, X., Moix, D., Sune, J., Hurley, P.K. and Miranda, E. (2013b) Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. Microelectronics Reliability 53, 1257–1260.
Saura, X., Monaghan, S., Hurley, P.K., Sune, J. and Miranda, E. (2014) Failure analysis of MIM and MIS structures using point-to-event distance and angular probability distributions. IEEE Transactions on Devices and Materials Reliability 14 (4) 1080–1090.
data(bdspots)
if(require(spatstat.geom)) {
plot(bdspots, equal.scales=TRUE)
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