Become an expert in R — Interactive courses, Cheat Sheets, certificates and more!
Get Started for Free

Oxide

Variability in Semiconductor Manufacturing


Description

The Oxide data frame has 72 rows and 5 columns.

Format

This data frame contains the following columns:

Source

a factor with levels 1 and 2

Lot

a factor giving a unique identifier for each lot.

Wafer

a factor giving a unique identifier for each wafer within a lot.

Site

a factor with levels 1, 2, and 3

Thickness

a numeric vector giving the thickness of the oxide layer.

Details

These data are described in Littell et al. (1996, p. 155) as coming “from a passive data collection study in the semiconductor industry where the objective is to estimate the variance components to determine the assignable causes of the observed variability.” The observed response is the thickness of the oxide layer on silicon wafers, measured at three different sites of each of three wafers selected from each of eight lots sampled from the population of lots.

Source

Pinheiro, J. C. and Bates, D. M. (2000), Mixed-Effects Models in S and S-PLUS, Springer, New York. (Appendix A.20)

Littell, R. C., Milliken, G. A., Stroup, W. W. and Wolfinger, R. D. (1996), SAS System for Mixed Models, SAS Institute, Cary, NC.


nlme

Linear and Nonlinear Mixed Effects Models

v3.1-152
GPL (>= 2) | file LICENCE
Authors
José Pinheiro [aut] (S version), Douglas Bates [aut] (up to 2007), Saikat DebRoy [ctb] (up to 2002), Deepayan Sarkar [ctb] (up to 2005), EISPACK authors [ctb] (src/rs.f), Siem Heisterkamp [ctb] (Author fixed sigma), Bert Van Willigen [ctb] (Programmer fixed sigma), Johannes Ranke [ctb] (varConstProp()), R-core [aut, cre]
Initial release
2021-02-03

We don't support your browser anymore

Please choose more modern alternatives, such as Google Chrome or Mozilla Firefox.